The president and boss of Samsung’s semiconductor industry Kyung Kye Hyun says that Samsung feels that it be able to beat TSMC’s globally hitting microchip production technology in the period of five years. Intel has also done same asserts just now, verifying that everybody in the chip manufacture competition has its eyes on manufacturing front runner TSMC.
Kyung Kye Hyun though admitted that Samsung is presently good off the speed. “To be honest, our foundry technology is one or two years behind TSMC’s,” he acknowledges. Nonetheless he feels that Samsung by this time has the benefit as the manufacturing steps on the way to 2 nanometer technology.
Mainly, since Samsung has now finished the progress to self-titled “Gate-All-Around” (GAA) transistors for its present 3 nanometer node, extensively understood as a key supporting tech for developed processing nodes. Samsung asserts that its GAA 3 nanometer technology brings 30 percent additional functioning, 50 percent lesser power utilization and a 45 percent decrease in chip space competed to its former node.
TSMC, representing its share, has kept previous FinFET transistor blueprints in its latest 3 nanometer node and will merely transfer to GAA transistors once it gets the start to 2 nanometers. Samsung feels that it has the benefit once it arrives to carry out GAA transistors, therefore the chance to surpass TSMC.
The small problem now is that Samsung’s description is not totally reliable. On one side, Samsung appears to identify that node terms like “3 nanometer” are as far marking as they are profound of the material features of transistors. That is why Samsung be able to assert that it can defeat TSMC to 3 nanometers but yet accepts it is some years behind schedule of TSMC. In concise, Samsung’s 3 nanometer is nothing alike TSMC’s 3 nanometers. Mainly engineering experts think that Samsung’s 3 nanometer technology is at top and comparable with older TSMC’s 5 nanometer nodes.
But on the second side, Samsung appears to be illustrating resemblance among its future 2 nanometer technology and TSMC’s 2 nanometer node. However, if Samsung is now two years behind schedule of TSMC and its 3-nanometer technology is almost the similar as TSMC’s 3 nanometer, in what way Samsung’s following node unexpectedly jump TSMC?
